发明名称 |
METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.
|
申请公布号 |
US2008274605(A1) |
申请公布日期 |
2008.11.06 |
申请号 |
US20080167025 |
申请日期 |
2008.07.02 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.;TOKYO ELECTRON LIMITED |
发明人 |
HOSHI TAKESHI;SAITO TSUYOSHI;KATO HITOSHI;ORITO KOICHI |
分类号 |
H01L21/31;H01L21/28 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|