| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing silicon, by which the problems found in a wet etching process of the silicon that accurate administration of the etching time is difficult, there is a danger of physical damage caused by sticking on a human body, and the environmental load is large at the time of disposal can be solved. SOLUTION: A silicon substrate 101 placed in an aqueous solution 106 containing a dissolved electrolyte free from OH group and a counter electrode 108 arranged opposite to the silicon substrate 101 are put close to each other, and then the silicon substrate 101 and the counter electrode 108 are each connected to an electric power source as the cathode and the anode, respectively. It becomes possible to easily administrate the etching time and to realize processing of the silicon substrate 108, resulting small load to the human body and the environment by applying a voltage such that the silicon substrate 101 is removed only in the vicinity of the counter electrode 108, and an oxide film is not formed on the surface of the silicon substrate 101. COPYRIGHT: (C)2004,JPO
|
