发明名称 PLASMA TREATMENT PROCESS
摘要 PROBLEM TO BE SOLVED: To reduce thermal damage of a substrate in an ion irradiation on an insulative substrate material with low thermal resistance such as a polycarbonate resin by irradiating ions produced in a plasma-producing chamber with relatively low energy on the substrate, without needing a neutralization device and without inducing self-bias by RF. SOLUTION: In the case that a high-frequency voltage is applied on an electrode 3, an electron irradiates on the insulative substrate 2 when the potential of the electrode 3 is higher than the plasma potential, and on the contrary, an ion irradiates thereon when the potential of the electrode 3 is lower than the plasma potential. As the electron is lighter in mass than the ion, its moving velocity is higher and instantly accumulates on the insulative substrate 2. Therefore, the positive charge of the ion charged up on the insulative substrate can be instantly removable. Accordingly, the time for attracting electrons onto the insulative substrate can be shortened in one periodic time. Thereby the incident amount of the ion and the electron is controlled by imposing a bias on the electrode 3 so that the amplitude of potential of the electrode 3 shifts negatively against the plasma potential. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003342401(A) 申请公布日期 2003.12.03
申请号 JP20020153868 申请日期 2002.05.28
申请人 CANON INC 发明人 OYA KATSUNORI;YAMAGUCHI HIROTO;KOIKE ATSUSHI;KANAI MASAHIRO
分类号 C08J7/00;(IPC1-7):C08J7/00 主分类号 C08J7/00
代理机构 代理人
主权项
地址