发明名称 POWER SEMICONDUCTOR MODULE WITH TERMINAL OF PIN STRUCTURE
摘要 PURPOSE: A power semiconductor module with a terminal of a pin structure is provided to reduce electrical hindrance by eliminating an intersection between a main electrode terminal and a sub electrode terminal, and to use copper material by shortening the length of the sub electrode terminal. CONSTITUTION: A plurality of main electrode terminal patterns protruding to the outside and a sub electrode terminal pattern disposed in the inside are arranged in the surface of a direct bonding copper(DBC) substrate(102). The main electrode terminals(108) connected to the main electrode terminal patterns and the sub electrode terminals(110) connected to the sub electrode terminal patterns made of pin structure. The main electrode terminal patterns and the sub electrode terminal patterns on the DBC substrate don't intersect each other.
申请公布号 KR20030091231(A) 申请公布日期 2003.12.03
申请号 KR20020029108 申请日期 2002.05.25
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 KIM, JI HWAN;LEE, GWANG BOK
分类号 H01L25/07;(IPC1-7):H01L25/07 主分类号 H01L25/07
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