| 摘要 |
A crystalline silicon film is formed on a substrate containing an OH group at 50-2,000 ppm and chlorine at 10-1,000 ppm at a process temperature range of 640°-980° C. by utilizing nickel. A thermal oxidation film is formed on the crystalline silicon film at a process temperature within the above range in an atmosphere containing HC1. By virtue of the action of chlorine, nickel is gettered into the thermal oxidation film. By removing the thermal oxidation film, a crystallline silicon film is obtained which has superior crystallinity and a low nickel concentration. |
