发明名称 |
Nonvolatile semiconductor memory device with peripheral circuit part comprising at least one of two transistors having lower conductive layer same perpendicular structure as a floating gate |
摘要 |
A nonvolatile semiconductor memory device capable of readily distinctively forming transistors in a peripheral circuit part and a transistor in a memory cell part while minimizing the number of times of high-temperature heat treatment are obtained. In the peripheral circuit part, at least one of a first transistor and a second transistor has a lower conductive layer having the same perpendicular structure as a floating gate, an intermediate insulator film including an insulator film of the same perpendicular structure as an inter-gate isolation film and an upper conductive layer of the same perpendicular structure as a conductive layer of a control gate in ascending order on a gate insulator film thereof, and the intermediate insulator film includes a conduction part electrically connecting the upper conductive layer and the lower conductive layer with each other.
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申请公布号 |
US6657249(B2) |
申请公布日期 |
2003.12.02 |
申请号 |
US20020189575 |
申请日期 |
2002.07.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NISHIOKA NAHO;TSUJI NAOKI |
分类号 |
H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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