发明名称 Process for producing semiconductor device
摘要 A process for producing a semiconductor device, including the steps of forming grooves of a cut depth smaller than the thickness of a wafer; sticking a surface protective sheet onto the wafer surface; grinding the back of the wafer to divide the wafer into individual chips; adhering a dicing/die bond sheet onto the back of the wafer; peeling the surface protective sheet from the wafer surface to thereby expose the adhesive layer of the dicing/die bond sheet through each space between individual chips; cutting the dicing/die bond sheet; detaching the individual chips from the base of the dicing/die bond sheet; and bonding the individual chips through the adhesive layer of the dicing/die bond sheet to a given substrate.
申请公布号 US6656819(B1) 申请公布日期 2003.12.02
申请号 US20000723083 申请日期 2000.11.27
申请人 LINTEC CORPORATION 发明人 SUGINO TAKASHI;SENOO HIDEO
分类号 H01L23/12;H01L21/301;H01L21/304;H01L21/52;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 主分类号 H01L23/12
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