发明名称 |
Process for producing semiconductor device |
摘要 |
A process for producing a semiconductor device, including the steps of forming grooves of a cut depth smaller than the thickness of a wafer; sticking a surface protective sheet onto the wafer surface; grinding the back of the wafer to divide the wafer into individual chips; adhering a dicing/die bond sheet onto the back of the wafer; peeling the surface protective sheet from the wafer surface to thereby expose the adhesive layer of the dicing/die bond sheet through each space between individual chips; cutting the dicing/die bond sheet; detaching the individual chips from the base of the dicing/die bond sheet; and bonding the individual chips through the adhesive layer of the dicing/die bond sheet to a given substrate.
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申请公布号 |
US6656819(B1) |
申请公布日期 |
2003.12.02 |
申请号 |
US20000723083 |
申请日期 |
2000.11.27 |
申请人 |
LINTEC CORPORATION |
发明人 |
SUGINO TAKASHI;SENOO HIDEO |
分类号 |
H01L23/12;H01L21/301;H01L21/304;H01L21/52;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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