| 发明名称 |
Manufacturing method of photomask and photomask |
| 摘要 |
In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer. |
| 申请公布号 |
US6656644(B2) |
申请公布日期 |
2003.12.02 |
| 申请号 |
US20010881701 |
申请日期 |
2001.06.18 |
| 申请人 |
HITACHI LTD. |
发明人 |
HASEGAWA NORIO;TANAKA TOSHIHIKO;OKADA JOJI;MORI KAZUTAKA;MIYAZAKI KO |
| 分类号 |
G03F1/08;G03F1/00;G03F1/10;G03F1/14;G03F1/32;G03F1/38;G03F1/40;G03F1/54;G03F1/56;G03F1/62;G03F1/68;G03F1/80;G03F7/00;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
| 代理机构 |
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