发明名称 |
Thin-film transistor array and method for manufacturing same |
摘要 |
A high-quality thin-film transistor array. The gate insulating film below the pixel electrode is etched off in its entirely or along a slit extending along a drain bus line in order to simultaneously remove the residual a-Si produced due to defective patterning. The insulating film is interposed between a drain bus line and a pixel electrode to form a boundary separating layer therebetween. The reject ratio is suppressed by reducing the occurrence of point defects of semi-bright spots, ascribable to capacitative coupling to the pixel electrodes as a result of interconnection of the residual a-Si produced by defective patterning to the drain bus line.
|
申请公布号 |
US6657226(B1) |
申请公布日期 |
2003.12.02 |
申请号 |
US20000632247 |
申请日期 |
2000.08.03 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
TAGUCHI NAOYUKI;OHI SUSUMU |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
G02F1/1343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|