Method of manufacturing magnetoresistive device, method of manufacturing thin film magnetic head, and method of forming thin film pattern

摘要

Provided are a method of manufacturing a magnetoresistive device and a method of manufacturing a thin film magnetic head capable of efficiently forming a magnetoresistive device having an extremely small magnetoresistive film pattern, and capable of reducing variations in dimensions of the magnetoresistive film pattern. Further, provided is a method of forming a thin film pattern capable of efficiently forming a plurality of thin film patterns with different sizes on a same base with accuracy according to the thin film patterns. Electron beam lithography or photolithography is selectively used according to the sizes of patterns to be formed, so while the dimensional accuracy of a portion specifically requiring higher accuracy can be secured, the patterns can be efficiently formed.