发明名称 MRAM with an effective noise countermeasure
摘要 In a magnetic random access memory having a memory device portion (33,34,35) using magnetic material, a high-frequency current suppressor (26) is arranged in the vicinity of the magnetic material to suppress a high-frequency current which flows in the memory device portion. The memory device and the high-frequency current suppressor may be collectively molded in a mold body (25) of a plastic resin. It is preferable that the high-frequency current suppressor is made of a thin film of a granular magnetic material which has a composition represented by M-X-Y where M is a magnetic metal element, Y is one element selected from oxygen, nitrogen, and fluorine, and X is an element other than M and Y.
申请公布号 US6657246(B2) 申请公布日期 2003.12.02
申请号 US20010927974 申请日期 2001.08.10
申请人 NEC TOKIN CORPORATION 发明人 ONO HIROSHI;YOSHIDA SHIGEYOSHI;MASUMOTO TOSHIAKI
分类号 H01L27/10;G11C11/15;G11C11/16;H01F10/00;H01F10/16;H01F10/18;H01F10/32;H01L21/8246;H01L23/16;H01L23/552;H01L27/105;H01L43/08;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L43/00;H01L23/495;H01L23/02 主分类号 H01L27/10
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