| 摘要 |
In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the like. The transistor component according to the present invention comprises a silicon grain 100A with a drain area 402 and a source area 401 formed via a channel area 403, an oxidation film 101 covering the surface of the silicon grain 100A, a gate electrode 300A connecting with the channel area 403 via the oxidation film 101, and a drain electrode 200A electrically connecting with the drain area 402, and a source electrode 400A electrically connecting with the source area 401.
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