| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile memory circuit whose occupation space is small, whose memory storage capacity can be improved and which can inexpensively be manufactured. <P>SOLUTION: An intermesh memory element (500) comprises a plurality of memory components (204) having decidable resistance values, and a plurality of electronic switches (206) which control currents flowing in the memory components and each of which gives potential to one memory component or a plurality of the memory components. The first electronic switch (206) of the intermesh memory element is electrically connected to an input (210) of the memory component, and a second electronic switch (232) is electrically connected to an output (254) of the memory component. The first electronic switch and the second electronic switch are constituted so that the potential is given to the memory components. <P>COPYRIGHT: (C)2004,JPO</p> |
