| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of a storage device formed of a ferroelectric film of a lead zirconium titanate (PZT) having a perovskite crystal structure and to increase the number of storage times and to improve a life. SOLUTION: A phosphorus glass film is formed on the surface of a ferroelectric film. The ferroelectric film 102 is formed of an electrode film 101 formed of a Pt/Ti film which is a first electrode, and the phosphorus glass film 107 is formed on the ferroelectric film 102. An electrode film 103 formed of a Ti/Pt film which is a second electrode is formed on the phosphorous glass film 107. The phosphorous glass film is formed on the side of ferroelectric film or the surface of the ferroelectric film is made to be a rough texture. At least the surface of the ferroelectric film is made to be rough for enabling self-compensation, or an oxidizing agent is added compensating oxygen loss in a crystal lattice. Thus, the deterioration of the ferroelectric film can be prevented. Consequently, a storage device in which the number of rewriting times is not less than billion times and whose life is not less than ten years can be provided. COPYRIGHT: (C)2004,JPO
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