| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact plug having reduced contact resistance in which processes are simplified and the formation of a native oxide layer is controlled to decrease the contact resistance. SOLUTION: This method for forming a contact plug comprises following steps; a step for forming a contact hole for exposing the surface of a silicon substrate 20 in an interlayer dielectric film 26 formed on the silicon substrate 20, a step for removing a native oxide formed in the contact hole, a step for forming a single crystal silicon layer 28 on the surface of the silicon substrate in the contact hole by epitaxial growth performed in a first reaction chamber in which pressure is 10<SP>-6</SP>Torr or lower, and filling the contact hole with polysilicon 30, in a second reaction chamber. COPYRIGHT: (C)2004,JPO
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