SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To surely and easily suppress the reduction reaction of a capacity insulating film in a process performed in a reducing gas atmosphere.

SOLUTION: At least a part of a capacitive element 112 comprising a capacitive lower electrode 109, a capacitance insulating film 110 and a capacitive upper electrode 111 is coated with a second hydrogen barrier film 113 formed of at least one of bismuth tantalate, bismuth niobate and bismuth tantalum niobate.

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