发明名称 ORGANIC THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide an organic thin-film transistor that is stably activated under an environment wherein a device is used. SOLUTION: In the organic thin-film transistor having a gate electrode 2 formed on a support 1, a gate insulating layer 3 for covering the gate electrode, a source electrode 4, a drain electrode 5, and an organic semiconductor layer 6 formed on the gate insulating layer, at least the organic semiconductor layer is sealed with a sealing film 7 made of an ethylene-vinyl alcohol copolymer, thus achieving the organic thin-film transistor having a low leakage current and superior switching characteristics with a high ON/OFF ratio under high humidity. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003338629(A) 申请公布日期 2003.11.28
申请号 JP20020146036 申请日期 2002.05.21
申请人 KONICA MINOLTA HOLDINGS INC 发明人 HIRAI KATSURA
分类号 H01L21/312;H01L29/786;H01L51/00;H01L51/05;H01L51/30;(IPC1-7):H01L29/786 主分类号 H01L21/312
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