Depositing a copper film on a substrate, especially an integrated circuit, by chemical vapor deposition comprises using a copper precursor composition comprising copper(I) chloride or bromide and a selected organic solvent

摘要

Depositing a copper film on a substrate by contacting the heated substrate with a copper precursor in the vapor phase comprises using a copper precursor composition comprising copper(I) chloride or bromide and a selected organic solvent. Depositing a copper film on a substrate by contacting the heated substrate with a copper precursor composition in the vapor phase, optionally in the presence of hydrogen comprises using a copper precursor composition comprising copper(I) chloride or bromide and a nonaromatic, nonplanar, heteroatom-free organic solvent with at least two nonconjugated unsaturations selected from: (a) noncyclic compounds optionally substituted with alkyl groups on unsaturated carbons; (b) alkyl-substituted diunsaturated cyclic compounds; (c) monounsaturated cyclic compounds with unsaturated substituents; and (d) cyclic compounds with a diunsaturated substituent or two monounsaturated substituents.