发明名称 |
Thin film magnetic memory device having an access element shared by a plurality of memory cells |
摘要 |
A tunneling magneto-resistance element forming an MTJ memory cell is connected between a bit line and a strap. In each memory cell column, the strap is shared by the plurality of tunneling magneto-resistance elements in the same row block. The access transistor is connected between strap and ground voltage, and is turned on/off in response to a corresponding word line. Storage data is read from the selected memory cell based on a comparison between results of data reading effected on a memory cell group coupled to the same strap before and after application of a predetermined magnetic field to the selected memory cell.
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申请公布号 |
US2003218901(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20020301838 |
申请日期 |
2002.11.22 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OOISHI TSUKASA;ISHIKAWA MASATOSHI |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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