发明名称 |
MOS transistor and method for fabricating the same |
摘要 |
A method for fabricating a CMOS transistor is disclosed. The present invention provides a method for producing a CMOS transistor having enhanced performance since a short channel characteristic and operation power can be controlled by the duplicate punch stop layer of the pMOS region and the operation power of the nMOS is also controlled by dopant concentration of the duplicated LDD region combined by the first LDD region and the second LDD region.
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申请公布号 |
US2003218219(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20020331590 |
申请日期 |
2002.12.31 |
申请人 |
SOHN YONG-SUN;RYOO CHANG-WOO;LEE JEONG-YOUB |
发明人 |
SOHN YONG-SUN;RYOO CHANG-WOO;LEE JEONG-YOUB |
分类号 |
H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/10;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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