发明名称 |
Semiconductor device and manufacturing method therefor |
摘要 |
A semiconductor device and a manufacturing method therefor are provided, the semiconductor device having a good reverse recovery characteristic, and having no reduction in breakdown voltage because no defect occurs in the upper main surface of a Si substrate even when wires are bonded onto an anode electrode. A semiconductor device comprises a Si substrate including an N<+> cathode layer (101) and an N<-> layer (102). An impurity such as platinum whose barrier height is less than that of silicon is introduced into upper regions of the N<-> layer (102) where P anode layers (103) are not formed, thereby forming Schottky junction regions (104). A barrier metal (105) is formed between the Si substrate and an anode electrode (106). |
申请公布号 |
US2003218230(A1) |
申请公布日期 |
2003.11.27 |
申请号 |
US20020273116 |
申请日期 |
2002.10.18 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TAKAHASHI HIDEKI;AONO SHINJI |
分类号 |
H01L21/60;H01L23/485;H01L27/08;H01L29/47;H01L29/872;(IPC1-7):H01L27/095 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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