| 摘要 |
<p>The invention relates to a method of depositing copper on a support. The inventive method comprises the vapour phase conversion of a copper precursor which is in contact with the heated support and, optionally, in the presence of hydrogen. Said copper precursor is in the form of a CuCl or CuBr composition in a non-planar, non-aromatic liquid organic solvent which is free from heteroatoms and which has at least two unconjugated unsaturations.</p> |
