| 摘要 |
A heterojunction bipolar transistor, (40), is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor, (40), shown in Figure 1, includes a contact region layer (22), formed from InGaAsSb. The contact region, (20/22), allows an emitter region, (18), of the heterojunction bipolar transistor, (40), to realize a lower contact resistance value to yield an improved cutoff frequency (fT). |
