发明名称 Semiconductor memory module
摘要 A bare chip is provided with a pad for activation/deactivation control to which a deactivation control signal for converting a bare chip that has been detected as being defective into the deactivated condition is inputted. When a deactivation control signal is inputted to the pad for activation/deactivation control, internal circuit prevent a signal that has been inputted from the pad for data input/output control from being inputted to an internal circuit located further inside than the input buffer circuit. Thereby, the bare chip that has been detected as being defective can be converted to the deactivated condition. As a result, a semiconductor memory module can be obtained that can be repaired by newly mounting a good function chip without allowing the bare chip that has been detected as being defective to interfere with the functions of the semiconductor memory module.
申请公布号 US2003218216(A1) 申请公布日期 2003.11.27
申请号 US20020286756 申请日期 2002.11.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUMOTO YASUHIRO;TANAKA SHINJI;SAWADA SEIJI;TANIDA SUSUMU;FUKIAGE TAKAHIKO
分类号 H01L25/18;G11C5/00;G11C5/04;G11C5/06;G11C11/401;G11C11/403;G11C29/00;G11C29/04;H01L23/50;H01L25/04;H01L25/065;H01L25/10;H01L31/062;(IPC1-7):H01L31/062 主分类号 H01L25/18
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