Semiconductor sensor for detecting target molecules and molecular change effects in protein recognition, analysis and quantification comprises a field effect transistor with a gate produced from SOI substrates

摘要

Semiconductor sensor comprises a field effect transistor with a gate produced from SOI substrates with the aid of standard and advanced sub-microm technology. The conductivity in the transistor is limited to a thin conducting layer close to the surface which is insulated from the substrate by a trenched oxide. The transistor is covered with a functional surface layer made e.g. from immobilized molecules.