A semiconductor device barrier layer

摘要

A barrier layer for a semiconductor device metallization component provides a silicon nitride film 29 formed in a component recess and a refractory metal film 30 formed over the silicon nitride film. The device component includes a dielectric material and a recess formed in the dielectric. The surface of the dielectric material within the recess is exposed to nitrogen under controlled parameters. A section of the dielectric material adjacent an interior of the recess is converted to silicon nitride. The refractory metal is then conformed deposited along the recess sidewalls. A seed layer 33 is then deposited over the refractory metal film, and a conductive metal 27 is then deposited within the recess. The device is then polished to remove excess metal outside the recess and planarize the device.