发明名称 Power Semiconductor with Attachable Protection Circuit
摘要 A semiconductor module includes a MOSFET chip and a package for accommodating the MOSFET chip. The drain area of the MOSFET chip is connected to a base substrate. A source and a gate electrode are arranged on the top of the package, and also a drain electrode to be connected to the base substrate is arranged. On a printed-circuit board, to which a protection circuit is implemented, holes corresponding to the drain electrode, the source electrode, and the gate electrode are formed. The protection circuit is attached to the semiconductor module while the electrodes penetrate into the respective holes. <IMAGE>
申请公布号 EP0971412(A3) 申请公布日期 2003.11.26
申请号 EP19990113258 申请日期 1999.07.08
申请人 KABUSHIKI KAISHA TOYOTA JIDOSHOKKI 发明人 NAGASE, TOSHIAKI
分类号 H01L25/16 主分类号 H01L25/16
代理机构 代理人
主权项
地址