发明名称 Method for reducing wafer edge defects in an electrodeposition process
摘要 A method for reducing or avoiding semiconductor wafer peripheral defects and contamination during and following electrodeposition including providing a wafer chuck assembly sealably attached to a back side of a semiconductor wafer leaving an exposed peripheral portion of the back side of the semiconductor wafer the backside parallel to a front side of the semiconductor wafer comprising a process surface; contacting at least the semiconductor process surface with a process solution; and, simultaneously directing a pressurized flow of gas onto the exposed peripheral portion such that the pressurized flow of gas covers the exposed peripheral portion including being radially directed outward toward the periphery of the semiconductor wafer.
申请公布号 US6652726(B1) 申请公布日期 2003.11.25
申请号 US20020147759 申请日期 2002.05.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. 发明人 CHOU SHIH-WEI
分类号 C25D7/12;H01L21/288;(IPC1-7):C25D5/00 主分类号 C25D7/12
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