Semiconductor device, memory system, and electronic instrument

摘要

The present invention provides a semiconductor device including a first gate-gate electrode layer located in a first conductive layer and including gate electrodes of a first load transistor and a first driver transistor and a second gate-gate electrode layer located in the first conductive layer and including gate electrodes of a second load transistor and a second driver transistor. A first drain-drain connecting layer is located in a second conductive layer which is an upper layer of the first conductive layer and connects a drain of the first load transistor with a drain of the first driver transistor. A second drain-drain connecting layer is located in the second conductive layer and connects a drain of the second load transistor with a drain of the second driver transistor. A first drain-gate connecting layer is located in a third conductive layer which is an upper layer of the first and second drain-drain connecting layers and connects the first drain-drain connecting layer with the second gate-gate electrode layer and a stacked contact-conductive section connects the third conductive layer with the first conductive layer and has a structure in which an upper layer conductive section buried in a second interlayer dielectric used to insulate the second conductive layer from the third conductive layer is stacked over a lower layer conductive section buried in a first interlayer dielectric used to insulate the first conductive layer from the second conductive layer.