| 发明名称 |
Semiconductor device |
| 摘要 |
A contact plug 26 formed between adjacent two wirings 14 according to a self-aligning manner is provided. An interlayer oxide film 12 is provided on a substrate layer 10 conductive to the bottom face of the contact plug. A lower insulating film 32 formed of a nitride based insulating film is provided so as to cover the entire surface of the interlayer oxide film 12 except for the contact hole portion. A wiring 12, an upper insulating film 16 formed of a nitride based insulating film, and sidewalls 18 formed of a nitride based insulating film are provided over the lower insulating film 32. The contact hole has a diameter larger than the interval defined between the wirings 14 in the same layer as the interlayer oxide film 12.
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| 申请公布号 |
US6653739(B2) |
申请公布日期 |
2003.11.25 |
| 申请号 |
US20010901113 |
申请日期 |
2001.07.10 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TERAUCHI TAKASHI;TANAKA YOSHINORI |
| 分类号 |
H01L21/28;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L23/52;H01L23/48 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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