DRY ETCH METHOD FOR PBZRXTI1-XO3 THIN FILM

摘要

PURPOSE: A dry etch method for a PBZRXTI1-XO3 thin film is provided to form a thin film of a clean pattern without re-deposition of PZT by using Cl2/C2F6/Ar mixture gas composed of Cl2 gas and C2F6 gas without using Ar gas as etch gas. CONSTITUTION: Mixture gas of Cl2/C2F6/Ar is used as etch gas in a reaction chamber into which a PbZrxTi1-xO3 thin film(12) is inserted. The PBZRXTI1-XO3 thin film is etched to form a desired pattern while the generation of residual polymer is prevented and a re-deposition of a PbZrxTi1-xO3 reaction product is avoided.