| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resonance cavity type semiconductor light emitting element in which a decrease in light emitting intensity in association with a change in environment temperature is suppressed as much as possible. <P>SOLUTION: Light emitted from a light emitting layer including an active layer 54 is optically resonated in two different resonance wavelengths from each other by an optical resonator having a notch filter and a reflecting layer 54. The two resonance wavelengths are set to values deviated by predetermined wavelengths to the long wavelength side and the short wavelength side from a desired light emitting wavelength λ for the semiconductor light emitting element 50. Hence, a wavelength region which can be taken by light having a predetermined angle range of an angle ϕ formed between the advancing direction contributing, for example, to optical communication and a normal at the center of a light emitting surface 80 can be enlarged without almost lowering a light emitting output. Accordingly, even if the peak wavelength of the photoluminescence intensity of light generated from the light emitting layer is transited to the long wavelength side or the short wavelength side in association with a temperature change, the light of the intensity of the same degree as normal temperature can be supplied. <P>COPYRIGHT: (C)2004,JPO |
