SAME BANK DOUBLE-SELECTION PREVENTING CIRCUIT

摘要

PURPOSE: A same bank double-selection preventing circuit is provided to prevent a plurality of word lines from being enabled at the same time in the same memory bank. CONSTITUTION: A synchronous memory device is driven by being synchronized to an external clock signal, and includes at least one memory bank having a structure where memory cells selected by a number of word lines share the same bit line sense amplifier. An active command sensing unit(310) provides an active pulse signal generated as a pulse in response to a bank active command, and provides an active driving signal enabled in response to the generation of the active pulse signal. An active delay(320) provides an active delay signal, by delaying the above active driving signal. A control signal generator(330) provides a decoder control signal synchronized to the above active pulse signal, and is disabled by the activation of the active delay signal. And a row predecoder(340) generates a driving signal driving a specific word line of the memory bank ultimately, and receives the decoder control signal through a clock input stage.