| 摘要 |
The device for controlling a fast switch/interrupter (2) with insulated gate for switching pulses of high current and short length in a load circuit (6), comprises a control circuit (36) for setting the switch in conducting state (on state) and a discharge block (40) for blocking the switch (setting in off state). The control circuit (36) derives from the load circuit (6) a current towards a control electrode (22) of the switch for setting the switch in conducting state, and a clamping/catching element (39) limits the voltage on the control electrode. The switch (2) has a resistance and also an internal inductance adapted to the current of pulses so that it presents a voltage below 50 V between the main electrodes (12,14) connected to the load circuit (6). The control circuit comprises at least one interrupter (38) connected between the control electrode (22) and the first main electrode (12) of the switch. The switch (2) comprises at least one insulated-gate transistor (4), where the main electrodes (12,14) correspond to the drain and the source of the transistor, and the control electrode (22) corresponds to the gate (23) of the transistor (4). The insulated-gate transistor is of type MOS, IGBT, or another insulated-gate component. The interrupter (38) is a field-effect transistor (FET). The means for setting in conducting state comprise a diode (42) connected in series with the interrupter (38), and a clamping/catching element (44) connected in parallel with the interrupter (38) for liiting the voltage on the control electrode (22). The switch (2) can comprise a set of transistors (4) connected in parallel and/or in series. The switch (claimed) for pulses of high current and short length comprises a set of insulated-gate transistors (4) distributed in groups of transistors connected in series and/or in parallel, which are controlled by devices (claimed) associated with each group.
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