PRODUCTION METHOD AND PRODUCTION DEVICE FOR SINGLE CRYSTAL

摘要

A production method and a production device for a semiconductor single crystal. The production device (1) for a single crystal comprises a crucible (2) for storing the material melt (4) of a single crystal (7) to be grown, a heater (3) for heating this melt (4), a wire (5) for bringing a seed crystal (6) into contact with the surface of the melt (4) in the crucible (2) to pull up the single crystal (7), a chamber (9) for housing the above members, and a magnet (15) for applying magnetic field. Necking is carried out in the absence of magnetic field, before pulling is stopped, and the heater (3) is temperature-controlled. Then, magnetic field is gradually applied by the magnet (15) until a magnetic field intensity reaches a desired value, and thereafter pulling is resumed. A large-diameter, heavy-weight semiconductor single crystal can be safely pulled up with dislocation at a restriction part removed and without causing breakage at the restriction part.