| 摘要 |
Nonvolatile memory cells are arranged at crossing points of bit-lines and word-lines. A mode signal indicates whether the nonvolatile memory cells are to be used as a RAM or as a ROM. When the nonvolatile memory cells are to be used as RAM, current is allowed to flow through the bit-lines in one specific direction, current is allowed to flow through the word-lines and the direction of the current flowing through the word-lines is adjusted to write data in the nonvolatile memory cells. When the nonvolatile memory cells are to be used as ROM, no current is allowed to flow through the bit-lines or the word-lines so that data can not be written in the nonvolatile memory cells.
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