发明名称 |
Bump formed on semiconductor device chip and method for manufacturing the bump |
摘要 |
A bump of a semiconductor chip comprises a plurality of bond pads formed on a semiconductor chip, a conductive bump formed on the bond pads; and a sidewall insulating layer formed on sidewalls of the conductive bump. It is possible for the semiconductor chip to prevent electrical shorts and improve productivity even though a pitch of bond pad is decreased.
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申请公布号 |
US2003214035(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20030426155 |
申请日期 |
2003.04.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON YONG-HWAN;KANG SA-YOON |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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