| 摘要 |
PURPOSE: A CMOS transistor is provided to be capable of reducing the size of circuits and improving operation speed by using a channel junction instead of a floating node. CONSTITUTION: A semiconductor substrate(10) includes the first and second region(20,30). A P-well(40) is formed at the first region(20) of the substrate. The first junction region(50) is formed in the P-well(40) for fetching the first electrode(110). The second junction region(60) is formed in the second region(30) for fetching the second electrode(120). The first gate oxide layer(70) and the first gate electrode(80) are stacked on the first region(20) to partially overlap the first junction region. The second gate oxide layer(90) and the second gate electrode(100) are stacked on the second region(30) to partially overlap the second junction region. The first channel is formed at a lower of the first gate electrode(80) and the second channel is formed at a lower of the second gate electrode(100), thereby forming a PN junction.
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