发明名称 |
METHODS FOR FORMING LOW RESISTIVITY, ULTRASHALLOW JUNCTIONS WITH LOW DAMAGE |
摘要 |
Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, and short-time thermal processing of the doped surface layer to form the charge carrier complexes. The short-time thermal processing step may be implemented as flash rapid thermal processing of the doped surface layer, sub-melt laser processing of the doped surface layer, or RF or microwave annealing of the doped surface layer. |
申请公布号 |
WO03096386(A2) |
申请公布日期 |
2003.11.20 |
申请号 |
WO2003US14353 |
申请日期 |
2003.05.08 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
DOWNEY, DANIEL, F. |
分类号 |
H01L21/265;H01L21/268;H01L21/324 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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