| 摘要 |
A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step 102 of FIG. 1), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.
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