PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A photoelectromotive device and a manufacturing method thereof are provided to prevent the generation of damage by forming a silicon nitride film having different composition ratios. CONSTITUTION: A semiconductor substrate includes a first side and a second side. A gap insulating layer(160) of a silicon nitride film is arranged on the first side. A semiconductor structure(130",140") is arranged on the first side. An electrode(151,152) is arranged on the semiconductor structure. The composition ratio of silicon and nitride adjacent to the semiconductor substrate is formed differently from that of far from the semiconductor substrate.