SUPERHARD DIELECTRIC COMPOUNDS AND METHODS OF PREPARATION
摘要
Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X-O-XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
申请公布号
WO03058644(A3)
申请公布日期
2003.11.20
申请号
WO2002US32499
申请日期
2002.10.10
申请人
ARIZONA BOARD OF REGENTS;KOUVETAKIS, JOHN;TSONG, I., S., T.;TORRISON, LEVI;TOLLE, JOHN
发明人
KOUVETAKIS, JOHN;TSONG, I., S., T.;TORRISON, LEVI;TOLLE, JOHN