发明名称 |
Enhanced storage states in an memory |
摘要 |
A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
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申请公布号 |
US2003214830(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020150744 |
申请日期 |
2002.05.17 |
申请人 |
RICKES JURGEN THOMAS;MCADAMS HUGH PRYOR;SUMMERFELT SCOTT ROBERT |
发明人 |
RICKES JURGEN THOMAS;MCADAMS HUGH PRYOR;SUMMERFELT SCOTT ROBERT |
分类号 |
G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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