发明名称 |
SRAM WITH IMPROVED NOISE SENSITIVITY |
摘要 |
A static random access memory (SRAM) with cells in one portion having a higher beta ratio than the remaining cells of the array. In a first portion, cells have a low beta ratio for high performance. A second portion of the array contains SRAM cells with a higher beta ratio that are more stable than the cells in the first portion, but are somewhat slower.
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申请公布号 |
US2003214833(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020143870 |
申请日期 |
2002.05.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;JOSHI RAJIV V.;WONG ROBERT C. |
分类号 |
G11C11/412;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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