发明名称 SRAM WITH IMPROVED NOISE SENSITIVITY
摘要 A static random access memory (SRAM) with cells in one portion having a higher beta ratio than the remaining cells of the array. In a first portion, cells have a low beta ratio for high performance. A second portion of the array contains SRAM cells with a higher beta ratio that are more stable than the cells in the first portion, but are somewhat slower.
申请公布号 US2003214833(A1) 申请公布日期 2003.11.20
申请号 US20020143870 申请日期 2002.05.14
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HSU LOUIS L.;JOSHI RAJIV V.;WONG ROBERT C.
分类号 G11C11/412;(IPC1-7):G11C11/00 主分类号 G11C11/412
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