发明名称 METHOD FOR MANUFACTURING FILM FOR GAS SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a film for a gas sensor and having a sufficient sensitivity at a low temperature of 0°or lower and provided with high reliability and a long life. SOLUTION: The method for manufacturing the film for the gas sensor is provided with both an element and an optical means. The element comprises a film made of a mixed layer of both a catalyst metal 3 for dissociating and adsorbing hydrogen or a hydrogen-containing compound gas and a solid compound semiconductor 4 which is reduced by hydrogen atoms generated by the dissociation and adsorption in the catalyst metal and returns to a previous state prior to the reduction in the case of the absence of the hydrogen atoms. The optical means detects changes in the light absorption of the solid compound semiconductor due to the reduction. In the manufacturing method, a sol-gel solution is acquired by uniformly dispersing a catalyst metal compound such as a platinum chloride or a palladium chloride in a sol-gel solution of the solid compound semiconductor at the molecular level. The sol-gel solution is applied to a substrate 2 and sintered to form the film, and heat treatment is performed in dry air at 30-100°C for a predetermined time. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003329592(A) 申请公布日期 2003.11.19
申请号 JP20020133239 申请日期 2002.05.08
申请人 OKAZAKI SHINJI;NAKAGAWA HIDEMOTO;ASAKURA SHUKUJI;FUJI ELECTRIC CO LTD 发明人 OKAZAKI SHINJI;NAKAGAWA HIDEMOTO;ASAKURA SHUKUJI;TOMIUCHI YOSHIMASA;TSUJI NOBUHIKO
分类号 G01N31/00;G01N21/77;G01N31/10;(IPC1-7):G01N21/77 主分类号 G01N31/00
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