发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize the lowering of the manufacturing cost of a semiconductor device while improving yield by providing a method and its structure capable of reducing the number of processes in manufacturing the semiconductor device. <P>SOLUTION: In this semiconductor device, respective wirings (source wirings and drain wirings and the like) which are formed in a row direction and a column direction are formed with the same conductive film on an element substrate. Moreover, in this case, after a wiring of one side of the row direction or the column direction is discontinuously formed at parts where these wirings intersect and insulating films are formed on these wirings, a continuous wiring is formed by forming connection wirings for connecting discontinuous wiring with the same film as that of an electrode (this is referred to as a first electrode in the following) which is formed on the insulating films. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2003330388(A) |
申请公布日期 |
2003.11.19 |
申请号 |
JP20020140743 |
申请日期 |
2002.05.15 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NAKAMURA OSAMU;KUWABARA HIDEAKI;SHIBATA NORIKO |
分类号 |
G02F1/1343;G02F1/1362;G02F1/1368;G09F9/30;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;(IPC1-7):G09F9/30;H05B33/14;G02F1/136;G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|