发明名称 Verfahren zum Einbringen von Stoerstellen in Halbleiterstrukturen
摘要 Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.
申请公布号 DE1966236(A1) 申请公布日期 1971.12.16
申请号 DE19691966236 申请日期 1969.07.29
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人 CHARLES DUFFY,MICHAEL;AUGUST SCHUMANN JUN.,PAUL;YEH,TSU-HSING
分类号 H01L21/76;H01L21/00;H01L21/265;H01L21/322;H01L21/331;H01L21/337;H01L21/74;H01L21/761;H01L21/82;H01L21/822;H01L21/8222;H01L27/00;H01L27/04;H01L29/08;H01L29/167;H01L29/73;H01L29/808 主分类号 H01L21/76
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