发明名称 SEMICONDUCTOR MEMORY DEVICE COMPRISING DELAY LOCKED LOOP AND METHOD FOR OUTPUTTING DATA IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device comprising a delay locked loop(DLL) and a method for outputting data in the semiconductor memory device are provided to generate a latency signal and an enable signal by considering delays which the latency signal receives. CONSTITUTION: According to the semiconductor memory device, a delay locked loop(DLL)(410) receives an external clock and generates an internal clock synchronized to the above external clock. A buffer(420) receives the above internal clock and outputs a data clock by delaying the internal clock by the first time. An enable signal generation part(430) receives the internal clock and generates an enable signal by delaying the internal clock by the second time in response to a data read command. And a data output buffer(440) outputs data corresponding to the data read command in response to the enable signal and a data clock. The second time is shorter than the first time.
申请公布号 KR20030088324(A) 申请公布日期 2003.11.19
申请号 KR20020026436 申请日期 2002.05.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, SANG UNG
分类号 G11C7/10;(IPC1-7):G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项
地址