发明名称 MICROLITHOGRAPHIC PROJECTION ILLUMINATION SYSTEM
摘要 A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.
申请公布号 KR20030019577(A) 申请公布日期 2003.03.06
申请号 KR20037000622 申请日期 2003.01.15
申请人 发明人
分类号 G02B7/02;G03B21/00;G02B1/02;G02B5/30;G03F7/20;H01L21/027 主分类号 G02B7/02
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