发明名称 |
Method and apparatus for forming an under bump metallurgy layer |
摘要 |
A method and an apparatus for forming an under bump metallurgy layer over a contact pad area on an interconnect formed over a semiconductor substrate are provided which eliminate a pretreatment process for removing native oxide on the contact pad area prior to the deposition of the under bump metallurgy layer. In one embodiment, the removal of a cap layer which insulates the contact pad area and the deposition of the under bump metallurgy layer are carried out without leaving a vacuum environment.
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申请公布号 |
US6649533(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US19990305827 |
申请日期 |
1999.05.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
IACOPONI JOHN A. |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H02L21/20 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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